Electronically Tunable Ferroelectric Devices for Microwave Applications

Electronically Tunable Ferroelectric Devices for Microwave Applications
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By:"Stanis Courreges","Andrew Hunt","John Papapolymerou","Kwang Choi","Zhiyong Zhao"

Published on 2010 by

This chapter presents the latest research and development results by Georgia Institute of Technology and nGimat, including materials development, innovative capacitor structure, and device designs.

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This chapter presents the latest research and development results by Georgia Institute of Technology and nGimat, including materials development, innovative capacitor structure, and device designs. Using proprietary process and interface layers, we are able to grow epitaxial BST films on inexpensive sapphire substrates. A new capacitor structure utilizing highly resistive film improves IMD performance and enables low DC bias voltages. We have used a hybrid design scheme to simulate the circuit, which saves simulation time and memory used. A few design examples are presented including tunable filters and phase shifters covering frequency range up to Ka-band. The devices are easy to fabricate, and exhibit low loss, small size, and low-power consumption.

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